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Chip analysis method
1 C-SAM (ultrasonic scanning microscope), non-destructive examination: (1). Internal lattice structure, impurity particles, inclusions. Precipitates. (2) internal crack. (3) delamination defect. (4) cavity, bubble, gap, etc..
2 XRay (both of which are non destructive analysis means failure after the first use of the chip)
3 SEM scanning electron microscope /EDX energy dispersive X light meter (material structure analysis / defect observation, element composition routine micro area analysis, accurate measurement of component size)
4 EMMI light microscope /OBIRCH laser beam induced by the impedance variation test of /LC liquid crystals (which three belong to the commonly used to detect leakage current path analysis method, looking for hot spots, with the help of LC probe, oscilloscope)
5 FIB to do some circuit modification.
6 Probe Station probe /Probing Test probe test, ESD/Latch-up electrostatic discharge / latch test utility (some customers are on the two reliability test, before the chip into the client some customers is failure to think about to take good test piece to screen these) has been referred to the most commonly used means. There are some necessary analysis before the process of samples, the failure of die, decap (open, open cap), grinding, ball to De-gold bump, go to the layer, such as coloring, some also need the corresponding instrument machine, you can view the die SEM SAM and X Ray surface, look inside the package and delamination failure.
In addition to the commonly used means other failure analysis methods, atomic force microscopy AFM, SIMS two ion mass spectrometry, time-of-flight mass spectrometry TOF SIMS TEM, transmission electron microscopy, field emission scanning electron microscopy, field emission scanning auger microprobe, X photoelectron spectroscopy XPS, L-I-V test system, the loss of energy X light micro analysis system and many other means, but these projects are not very common
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